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ELECTRONIC MATERIALS LETTERS

  • : 대한금속재료학회(구 대한금속학회)
  • : 공학분야  >  금속공학
  • : KCI등재
  • : SCI,SCOPUS
  • : 연속간행물
  • : 계간
  • : 1738-8090
  • : 2093-6788
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수록정보
수록범위 : 1권1호(2005)~6권4호(2010) |수록논문 수 : 212
ELECTRONIC MATERIALS LETTERS
6권4호(2010년 12월) 수록논문
최근 권호 논문
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KCI등재 SCI SCOPUS

1Mechanism of the Sensitivity Enhancement in TiO2 Hollow-Hemisphere Gas Sensors

저자 : Hi Gyu Moon , Ho Won Jang , Jin Sang Kim , Hyung Ho Park , Seok Jin Yoon

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 135-139 (5 pages)

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We investigate the mechanism of the sensitivity enhancement in TiO2 hollow-hemisphere gas sensors. Using monolayer close-packed polystyrene microspheres as a sacrificial template, a TiO2 thin film based on a network of ordered hollow hemispheres is formed by room-temperature sputtering deposition and subsequent calcination at 550°C. A thin film gas sensor based on the TiO2 hollow hemispheres exhibits a 225% change in its resistance when exposed to 50 ppm CO at 250°C, whereas a gas sensor based on a flat TiO2 film shows an 85% change. Numerical analysis reveals that the enhancement of the gas sensitivity in the hollow-hemisphere gas sensor is simply the result of an increase in the effective surface area for the adsorption of gas molecules.

KCI등재 SCI SCOPUS

2Liquid Lens Module with Wide Field-of-View and Variable Focal Length

저자 : Sang Won Seo , Seung Oh Han , Jun Ho Seo , Woo Bum Choi , Man Young Sung

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 141-144 (4 pages)

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A novel wide angle and variable-focus imaging module based on a miniaturized liquid lens is presented for capsule endoscopy applications. For these applications, it is desirable to have features such as a wide field of view (FOV), variable focus, small size, and low power consumption, thereby taking full advantage of the miniaturized liquid lens. The proposed imaging module has three aspheric plastic lenses for a wide FOV, and one liquid lens that can change the focal length by as much as 24.5 cm with a bias voltage difference of 23 Vrms for variable focusing. The assembled lens module has an overall length of 8.4 mm and a FOV of 120.5°. The realized imaging module including the proposed lenses is small enough to be inserted into a capsule endoscope, and it is expected to improve the diagnostic capability of capsule endoscopes.

KCI등재 SCI SCOPUS

3Effect of Dysprosium Oxide Addition on the Microstructure and Dielectric Properties of Ba Tio3 Ceramics

저자 : Do Won Kang , Tae Gone Park , Jung Woo Kim , Jin Seong Kim , Hee Soo Lee , Hyun Cho

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 145-149 (5 pages)

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0.2-1.1 mol. % Dy was doped in BaTiO3 ceramics and the doping effect of Dy on the microstructure and the dielectric properties including permittivity and breakdown voltage was studied. The addition of Dy in the BaTiO3 ceramics was found to enhance the dielectric properties, which are attributed to an increase in tetragonality and a significant reduction in the average grain size due to the suppressed grain growth. The doped Dy plays an essential role in the formation of the core-shell structure in the BaTiO3 grains. The 0.8 mol. % Dy-doped BaTiO3 ceramics presented the highest dielectric constant and breakdown voltage due to the increased tetragonality, a remarkably reduced average grain size, and a well-developed core-shell structure in the grains.

KCI등재 SCI SCOPUS

4Mechanism of the Delayed Growth of Intermetallic Compound at the Interface between Sn-4.0Ag-0.5Cu and Cu-Zn Substrate

저자 : Young Min Kim , Kyoung Moo Harr , Young Ho Kim

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 151-154 (4 pages)

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A Cu-Zn wetting layer was very effective to depress the excessive growth of intermetallic compound (IMC). The effect of Zn addition to the Cu layer on the IMC growth and microvoid formation in the solder interface was similar to the effect of Zn addition into the Sn-Ag-Cu (SAC) solders. In this study, the mechanism of slow IMC growth at the SAC/Cu-Zn interfaces was investigated. As the aging time increased, Zn atoms accumulated at the Cu6Sn5/Cu interface and formed a Zn-rich layer. By adding Zn into the Cu wetting layer, the IMC growth was delayed due to the retardation of the formation of the Cu3Sn layer. Since the low driving force for the formation of Cu3Sn became smaller by adding Zn, the diffusion of Cu in Cu-Zn into SAC solder was delayed. Also, the CuZn phase formed at the Cu6Sn5/Cu-Zn interface plays a role as a diffusion barrier of interdiffusion of Cu and Sn.

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ZnO nanowires were formed on ZnO films by the oxidation of Zn at a temperature of 600℃ in air. The maximum intensities of the (002) and (101) diffraction peaks were observed for the ZnO film with nanowires on its surface. The finding that the intensities of the (002) and (101) peaks simultaneously exhibited maximum values conflicts with the conventional XRD patterns reported in many other studies on ZnO films. The highest intensity of the (002) peak results from the better crystalline quality than films prepared at other oxidation temperatures, and the highest intensity of the (101) peak is attributed to the higher density of nanowires. In addition, the ZnO film with nanowires exhibited the strongest UV emission intensity.

KCI등재 SCI SCOPUS

6Duty Ratio-Controlled Surface Roughness of Silicon Nitride Film deposited using Room-Temperature SIH4-NH3-N2 Plasma

저자 : Daeh Hyun Kim , Byung Whan Kim , Yong Ho Seo

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 161-166 (6 pages)

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Silicon nitride films were deposited with mixed gasses of SiH4-NH3-N2 using a pulsed, plasma-enhanced chemical vapor deposition system at room temperature. The surface morphology of the SiN films was investigated as a function of the bias power and duty ratio, which varied from 40 W to 100 W and 30% to 90%, respectively. The surface roughness is detailed in terms of the mean surface roughness, nonuniformity of the pixel height distribution, and minimum pixel range. Ion energy diagnostic data is correlated with the surface morphology. An empirical model constructed is used to examine the impact of the ion energy on the surface morphology. As the duty ratio varied under a fixed power level, the lowest degree of surface roughness was obtained at a relatively low duty ratio of 50% at all powers except100 W. It is not able that this is strongly correlated with the ion energy flux. Additionally, as the power varied at a fixed duty ratio, less surface roughness was noted at a relatively low power of 60 W. With variations in the power, the surface roughness strongly depended on the ion energy. For all variations in the process parameters, the surface roughness varied between 0.285 nm and 2.249 nm. The non-uniformity of the pixel height distribution was lowest at 50% at all powers except 60 W. A neural network model was utilized to explore the parameter effect.

KCI등재 SCI SCOPUS

7Heat Dissipation of Printed Circuit Board by the High Thermal Conductivity of Photo-Imageable Solder Resist

저자 : Seung Hyun Cho , Joseph Y Lee

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 167-172 (6 pages)

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Thermal management issues with IC packages have been growing as electronic systems have become smaller with a higher functionality. Since the high junction temperature of IC packages induces the low performance and malfunction of electronic systems, the thermal dissipation capability of electronics is important for stable electrical performance and electro-mechanical reliability. However, the conventional cooling methods that depend on air flow path and heat sink structure is not sufficient to meet the growing thermal requirements of IC packages. Since there is limit on conventional design, such as optimization air flow path and heat sink structure, to dissipate more heat through an exhaust fan system. The main purpose of the present research is to reduce the junction temperature of the IC package by using a Printed Circuit Board (PCB) coated with new Photo-imageable Solder Resist (PSR) that has high thermal conductivity. The thermal conductivity of the newly developed PSR is about five times as high as that of the conventional PSR for PCB(0.23~0.25W/m·K). The PCB was prepared by the EIA/JEDEC standard, JESD51-7. Experimental and finite element analyses were performed to investigate the effect of SR on thermal dissipation capability. The experimental and FE results show that the high thermal conductivity of PSR can reduce the steady-status regulator surface temperature by about 3~8K as an air flow conditions around PCB. Also, the high thermal conductivity of SR is more effective under a low air heat transfer coefficient condition. Therefore, it is believed that an improved heat transfer with a PSR of high thermal conductivity should provide stable electrical performance for the IC package.

KCI등재 SCI SCOPUS

8Hydrogen Generation for Fuel Cells from an Alkaline NaBH4 Solution using Co-Ni-P Catalysts Elecctrodeposited on TiO2 Nanotube Substrate

저자 : Kwi Sub Yun , Chan Jin Park

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 173-176 (4 pages)

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We investigated the effects of a TiO2 nanotube substrate on the electrodeposition of Co-Ni-P catalysts and the catalytic generation of hydrogen from an alkaline NaBH4 solution. In addition, the performance of the catalysts formed on the TiO2 nanotube substrate was compared with that on a Cu substrate. The nucleation rate of the Co-Ni-P catalysts on the TiO2 nanotube substrate was much faster than that on the Cu substrate, indicating that the TiO2 nanotube substrate supplies more nucleation sites than the Cu substrate. Furthermore, the surface area of the Co-Ni-P catalysts formed on the TiO2 nanotube substrate was larger than that on the Cu substrate; this larger surface area improved the efficiency of the catalytic generation of hydrogen from the alkaline NaBH4 solution.

KCI등재 SCI SCOPUS

9Thermoelectric Properties of P-Type Bismuth Telluride Powders Synthesized by a Mechano-Chemical Process

저자 : Kyung Tae Kim , Kyong Ju Kim , Gook Hyun Ha

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 177-180 (4 pages)

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P-type bismuth telluride thermoelectric (TE) powders were synthesized by a mechano-chemical process (MCP) in which a mixture of Bi sulfate, Sb chlorides, and TeO2 powders was dried, calcinated, and reduced to a powder alloy with ternary composition. The synthesized powders were a few micrometers in size, with a clear Bi0.5Sb1.5Te3 phase. The powders were consolidated into p-type bismuth telluride bulk materials that exhibited an electrical resistivity of 0.6 × 10 -5 Ωm, a Seebeck coefficient of 140 μVK-1, and a thermal conductivity of 1.3 Wm -1 K -1 at 298 K. Dimensionless figures-of-merit increased from 0.8 to 1.18 as the temperature increased from 298 K to 450 K. The results show that MCP is a promising process for the production of p-type bismuth telluride powders as raw materials for high-performance TE bulk alloys.

KCI등재 SCI SCOPUS

10Electron Transport Properties of Rapidly Solidified (GeTe)x(AgSbTe2)1-x Pseudobinary Thermoelectric Compounds

저자 : B. S. Kim , I. H. Kim , J. K. Lee , B. K. Min , M. W. Oh , S. D. Park , H. W. Lee , M. H. Kim

발행기관 : 대한금속재료학회(구 대한금속학회) 간행물 : ELECTRONIC MATERIALS LETTERS 6권 4호 발행 연도 : 2010 페이지 : pp. 181-185 (5 pages)

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(GeTe)x(AgSbTe2)1-x(x = 80, 85) compounds were fabricated by melting-hot press and RSP-hot press processes. The (GeTe)85(AgSbTe2)15 compound, which composed of mainly crystalline and partly amorphous structures, was produced in part by rapid solidification. X-ray diffraction analysis showed that the (GeTe)x(AgSbTe2)1-x compounds represented a single phase of GeTe. The electron transport properties were evaluated over the temperature range of RT~773K, and then systematically changed with compositions x in (GeTe)x(AgSbTe2)1-x compounds. The maximum Seebeck coefficient was 227 μV/K at 673K in the (GeTe)80(AgSbTe2)20 compounds fabricated by melting and hot-press process. The minimum resistivity was shown in the (GeTe)85(AgSbTe2)15by melting and hot-press process.

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